| Part number: | GC120N65QF |
| Description: | MOSFET N-CH 650V 30A TO-247 |
| Manufacturer | Goford Semiconductor |
| Encapsulation | Tube |
| Quantity | 30 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Goford Semiconductor" |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 38A, 10V |
| Power Dissipation (Max) | 96.1W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3100 pF @ 275 V |
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