| Part number: | ICE19N60L |
| Description: | Superjunction MOSFET |
| Manufacturer | IceMOS Technology |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 3000 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "IceMOS Technology" |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 9.5A, 10V |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | 4-DFN (8x8) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2064 pF @ 25 V |
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