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GPI65030TO5L
Part number: GPI65030TO5L
Description: GaNFET N-CH 650V 30A TO263-5L
Manufacturer GaNPower
Encapsulation Tape & Reel (TR)
Quantity 1
RoHS 1
TYPEDESCRIPTION
Mfr"GaNPower"
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 30A
Vgs(th) (Max) @ Id 1.4V @ 3.5mA
Drive Voltage (Max Rds On, Min Rds On) 6V
Vgs (Max) +7.5V, -12V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 5.8 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds 241 pF @ 400 V
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