| Part number: | TP44400SG |
| Description: | GAN FET HEMT 650V .36OHM 22QFN |
| Manufacturer | Tagore Technology |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 3000 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "Tagore Technology" |
| Package / Case | 22-PowerVFQFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 500mA, 6V |
| Vgs(th) (Max) @ Id | 2.5V @ 2.8mA |
| Supplier Device Package | 22-QFN (5x7) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 6V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 0.75 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 28 pF @ 400 V |
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