| Part number: | G01N20LE |
| Description: | N200V,RD(MAX)<850M@10V,RD(MAX)<9 |
| Manufacturer | Goford Semiconductor |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 3000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Goford Semiconductor" |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 1A, 10V |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 580 pF @ 25 V |
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