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Products
GPI65015TO
Part number: GPI65015TO
Description: GANFET N-CH 650V 15A TO220
Manufacturer GaNPower
Encapsulation Tube
Quantity 1
RoHS
TYPEDESCRIPTION
Mfr"GaNPower"
Package / Case Die
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Current - Continuous Drain (Id) @ 25°C 15A
Vgs(th) (Max) @ Id 1.2V @ 3.5mA
Supplier Device Package Die
Drive Voltage (Max Rds On, Min Rds On) 6V
Vgs (Max) +7.5V, -12V
Drain to Source Voltage (Vdss) 650 V
Gate Charge (Qg) (Max) @ Vgs 3.3 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds 123 pF @ 400 V
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