| Part number: | IPI90R800C3 |
| Description: | MOSFET N-CH 900V 6.9A TO262-3 |
| Manufacturer | IR (Infineon Technologies) |
| Encapsulation | Bulk |
| Quantity | 1 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "IR (Infineon Technologies)" |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 4.1A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 460µA |
| Supplier Device Package | PG-TO262-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 900 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 100 V |
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