| Part number: | EGL41B/1 |
| Description: | DIODE GEN PURP 100V 1A DO213AB |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Encapsulation | Tape & Reel (TR) |
| Quantity | 4000 |
| RoHS | 1 |
| TYPE | DESCRIPTION |
| Mfr | "Vishay General Semiconductor – Diodes Division" |
| Package / Case | DO-213AB, MELF (Glass) |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Technology | Standard |
| Capacitance @ Vr, F | 20pF @ 4V, 1MHz |
| Current - Average Rectified (Io) | 1A |
| Supplier Device Package | DO-213AB |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Voltage - Forward (Vf) (Max) @ If | 1 V @ 1 A |
| Current - Reverse Leakage @ Vr | 5 µA @ 100 V |
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