| Part number: | GB10SLT12-220 |
| Description: | DIODE SIL CARB 1.2KV 10A TO220-2 |
| Manufacturer | GeneSiC Semiconductor |
| Encapsulation | Tube |
| Quantity | 50 |
| RoHS |
| TYPE | DESCRIPTION |
| Mfr | "GeneSiC Semiconductor" |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 520pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 10 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 1200 V |
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