TYPE | DESCRIPTION |
Mfr | "Toshiba Electronic Devices and Storage Corporation" |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Mounting Type |
Surface Mount |
Transistor Type |
PNP - Pre-Biased |
Vce Saturation (Max) @ Ib, Ic |
250mV @ 1mA, 50mA |
Current - Collector Cutoff (Max) |
500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
90 @ 100mA, 1V |
Supplier Device Package |
S-Mini |
Current - Collector (Ic) (Max) |
800 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Power - Max |
200 mW |
Frequency - Transition |
200 MHz |
Resistor - Base (R1) |
2.2 kOhms |
Resistor - Emitter Base (R2) |
10 kOhms |