TYPE | DESCRIPTION |
Source Content uid: | VN2110K1-G |
Manufacturer Part Number: | VN2110K1-G |
Rohs Code: | Yes |
Part Life Cycle Code: | Active |
Package Description: | SAME AS SOT-23, 3 PIN |
Reach Compliance Code: | compliant |
ECCN Code: | EAR99 |
HTS Code: | 8541.29.00.95 |
Manufacturer: | Microchip Technology Inc |
Risk Rank: | 1.25 |
Additional Feature: | HIGH INPUT IMPEDANCE |
Configuration: | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min: | 100 V |
Drain Current-Max (ID): | 0.2 A |
Drain-source On Resistance-Max: | 4 Ω |
FET Technology: | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss): | 5 pF |
JEDEC-95 Code: | TO-236AB |
JESD-30 Code: | R-PDSO-G3 |
JESD-609 Code: | e3 |
Moisture Sensitivity Level: | 1 |
Number of Elements: | 1 |
Number of Terminals: | 3 |
Operating Mode: | ENHANCEMENT MODE |
Package Body Material: | PLASTIC/EPOXY |
Package Shape: | RECTANGULAR |
Package Style: | SMALL OUTLINE |
Peak Reflow Temperature (Cel): | 260 |
Polarity/Channel Type: | N-CHANNEL |
Qualification Status: | Not Qualified |
Surface Mount: | YES |
Terminal Finish: | Matte Tin (Sn) |
Terminal Form: | GULL WING |
Terminal Position: | DUAL |
Time@Peak Reflow Temperature-Max (s): | 40 |
Transistor Application: | SWITCHING |
Transistor Element Material: | SILICON |