| Part number: | PMDPB38UNE%2C115 |
| Description: | MOSFET 2N-CH 20V 4A HUSON6 |
| Manufacturer | NXP |
| Encapsulation | - |
| Quantity | 2064 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer | NXP |
| Category | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays |
| Package | 6-UDFN Exposed Pad |
| ECAD | |
| Series | - |
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Rds On (Max) @ Id, Vgs | 46 mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 268pF @ 10V |
| Power - Max | 510mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-UDFN Exposed Pad |
| Supplier Device Package | DFN2020-6 |
|
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