| Part number: | MRFX1K80GNR5 |
| Description: | RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 1800 W CW over 1.8-400 MHz, 65 V |
| Manufacturer | NXP Semiconductors |
| Encapsulation | - |
| Quantity | 32 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | Dual N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 43 A |
| Vds - Drain-Source Breakdown Voltage: | - 500 mV, 179 V |
| Operating Frequency: | 1.8 MHz to 400 MHz |
| Gain: | 24.4 dB |
| Output Power: | 1.8 kW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | OM-1230G-4L |
| Packaging: | Reel |
| Packaging: | Cut Tape |
| Brand: | NXP Semiconductors |
| Forward Transconductance - Min: | 44.7 S |
| Moisture Sensitive: | Yes |
| Number of Channels: | 2 Channel |
| Pd - Power Dissipation: | 3333 W |
| Product Type: | RF MOSFET Transistors |
| Series: | MRFX1K80 |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.1 V |
| Part # Aliases: | 935362677578 |
| Unit Weight: | 0.186296 oz |
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