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MMFTN3019E
Part number: MMFTN3019E
Description: N沟道 VDS=30V VGS=±20V ID=100mA P=150mW
Manufacturer ST(先科)
Encapsulation -
Quantity 4000
RoHS YES
TYPEDESCRIPTION
产品分类MOSFETs 晶体管
阈值电压Vgs(th)1.5V@100µA
FET类型N沟道
漏源电压(Vdss)30V
连续漏极电流Id@25℃100mA
导通电阻Rds On(Max)
功率(Max)150mW
封装/外壳SOT-523
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