| Part number: | BLT81%2C115 |
| Description: | BLT81,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at Utmel |
| Manufacturer | NXP USA Inc. |
| Encapsulation | - |
| Quantity | 2452 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 16 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1998 |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.29.00.75 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BLT81 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Power - Max | 2W |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 300mA 5V |
| Gain | 8dB |
| Voltage - Collector Emitter Breakdown (Max) | 9.5V |
| Current - Collector (Ic) (Max) | 500mA |
| Frequency - Transition | 900MHz |
| Power Dissipation-Max (Abs) | 2W |
| Highest Frequency Band | ULTRA HIGH FREQUENCY B |
| Collector-Base Capacitance-Max | 4pF |
| Power Dissipation Ambient-Max | 2W |
| RoHS Status | ROHS3 Compliant |
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