| Part number: | BFG410W%2C115 |
| Description: | BFG410W,115 datasheet pdf and Transistors - Bipolar (BJT) - RF product details from NXP USA Inc. stock available at Utmel |
| Manufacturer | NXP USA Inc. |
| Encapsulation | - |
| Quantity | 13572 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | BFG410 |
| Pin Count | 4 |
| JESD-30 Code | R-PDSO-G4 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | EMITTER |
| Power - Max | 54mW |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA 2V |
| Gain | 21dB |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| Current - Collector (Ic) (Max) | 12mA |
| Transition Frequency | 22000MHz |
| Frequency - Transition | 22GHz |
| Power Dissipation-Max (Abs) | 0.054W |
| Highest Frequency Band | L B |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Power Dissipation Ambient-Max | 0.054W |
| RoHS Status | ROHS3 Compliant |
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