| Part number: | APT32F120J |
| Description: | Discrete Semiconductor Modules FG, FREDFET, 1200V, SOT-227 |
| Manufacturer | Microchip / Microsemi |
| Encapsulation | - |
| Quantity | 8 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | Microchip |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Product: | Power MOSFET Modules |
| Vgs - Gate-Source Voltage: | 30 V |
| Mounting Style: | Screw Mount |
| Package / Case: | SOT-227-4 |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tube |
| Brand: | Microchip / Microsemi |
| Configuration: | Single |
| Fall Time: | 90 ns |
| Height: | 9.6 mm |
| Id - Continuous Drain Current: | 33 A |
| Length: | 38.2 mm |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 960 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 270 mOhms |
| Rise Time: | 60 ns |
| Factory Pack Quantity: Factory Pack Quantity: | 1 |
| Subcategory: | Discrete Semiconductor Modules |
| Technology: | Si |
| Tradename: | POWER MOS 8, ISOTOP |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 315 ns |
| Typical Turn-On Delay Time: | 100 ns |
| Vds - Drain-Source Breakdown Voltage: | 1.2 kV |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Width: | 25.4 mm |
| Unit Weight: | 1.058219 oz |
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