| Part number: | AFT09MS007NT1 |
| Description: | AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2 |
| Manufacturer | NXP |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | - |
| TYPE | DESCRIPTION |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 30V |
| Rated Power Dissipation: | 114W |
| Gate-Source Voltage-Max [Vgss]: | 12V |
| Operating Temp Range: | -40°C to +150°C |
| Gate Source Threshold: | 2.1V |
| Input Capacitance: | 107pF |
| Mounting Method: | Surface Mount |
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