| Part number: | A3T21H455W23SR6 |
| Description: | RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V |
| Manufacturer | NXP Semiconductors |
| Encapsulation | - |
| Quantity | 0 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer: | NXP |
| Product Category: | RF MOSFET Transistors |
| RoHS: | Details |
| Transistor Polarity: | Dual N-Channel |
| Technology: | Si |
| Id - Continuous Drain Current: | 3.6 A |
| Vds - Drain-Source Breakdown Voltage: | - 500 mV, 65 V |
| Operating Frequency: | 2110 MHz to 2200 MHz |
| Gain: | 15 dB |
| Output Power: | 87 W |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Mounting Style: | SMD/SMT |
| Package / Case: | ACP-1230S-4L2S |
| Packaging: | Reel |
| Brand: | NXP Semiconductors |
| Number of Channels: | 2 Channel |
| Product Type: | RF MOSFET Transistors |
| Factory Pack Quantity: Factory Pack Quantity: | 150 |
| Subcategory: | MOSFETs |
| Type: | RF Power MOSFET |
| Vgs - Gate-Source Voltage: | - 6 V, 10 V |
| Vgs th - Gate-Source Threshold Voltage: | 1.4 V |
| Part # Aliases: | 935368316128 |
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