| Part number: | 2SK3391JX |
| Description: | 2SK3391JX datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Renesas Electronics America Inc stock available at Utmel |
| Manufacturer | Renesas Electronics America Inc |
| Encapsulation | - |
| Quantity | 134038 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Factory Lead Time | 1 Week |
| Package / Case | TO-243AA |
| Surface Mount | YES |
| Supplier Device Package | UPAK |
| Number of Terminals | 3 |
| Transistor Element Material | SILICON |
| Mfr | Renesas Electronics America Inc |
| Package | Bulk |
| Product Status | Active |
| Package Shape | RECTANGULAR |
| Manufacturer | Renesas Electronics Corporation |
| Series | - |
| ECCN Code | EAR99 |
| Voltage - Rated | 17 V |
| Subcategory | FET General Purpose Power |
| Current Rating (Amps) | 10μA |
| Terminal Position | SINGLE |
| Terminal Form | FLAT |
| Reach Compliance Code | compliant |
| Frequency | 100MHz ~ 2.5GHz |
| Pin Count | 3 |
| JESD-30 Code | R-PSSO-F3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | SOURCE |
| Current - Test | 150 mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | N-Channel |
| Gain | - |
| Drain Current-Max (Abs) (ID) | 0.3 A |
| DS Breakdown Voltage-Min | 17 V |
| Power - Output | 1.6W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 5 W |
| Noise Figure | - |
| Voltage - Test | 13.7 V |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND |
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