| Part number: | 2SK1949L-E |
| Description: | 2SK1949L-E datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Renesas Electronics America Inc stock available at Utmel |
| Manufacturer | Renesas Electronics America Inc |
| Encapsulation | - |
| Quantity | 4456 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Surface Mount | NO |
| Number of Terminals | 3 |
| Transistor Element Material | SILICON |
| Mfr | Renesas Electronics America Inc |
| Package | Bulk |
| Product Status | Active |
| Package Shape | RECTANGULAR |
| Manufacturer | Renesas Electronics Corporation |
| Series | * |
| JESD-609 Code | e6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Bismuth (Sn/Bi) |
| Additional Feature | AVALANCHE RATED |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | compliant |
| Pin Count | 3 |
| JESD-30 Code | R-PSIP-T3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Transistor Application | SWITCHING |
| Polarity/Channel Type | N-CHANNEL |
| Drain-source On Resistance-Max | 0.2 Ω |
| Pulsed Drain Current-Max (IDM) | 20 A |
| DS Breakdown Voltage-Min | 60 V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
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