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2N7002P%2C215
Part number: 2N7002P%2C215
Description: N沟道 VDS=60V VGS=±20V ID=360mA P=350mW
Manufacturer NXP恩智浦
Encapsulation -
Quantity 8
RoHS YES
TYPEDESCRIPTION
产品分类MOSFETs 晶体管
阈值电压Vgs(th)-
漏极电流Idss360mA
FET类型N沟道
漏源极电压(Vdss)60V
漏源电压(Vdss)60V
连续漏极电流Id@25℃360mA
导通电阻Rds On(Max)1.6Ω
功率(Max)350mW
安装类型表面贴装(SMT)
封装/外壳SOT-23-3(SC-59,TO_236_3)
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