| Part number: | AFV09P350-04GNR3 |
| Description: | RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825 |
| Manufacturer | NXP Semiconductors |
| Encapsulation | - |
| Quantity | 50 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer Part Number: | AFV09P350-04GNR3 |
| Rohs Code: | Yes |
| Part Life Cycle Code: | Active |
| Ihs Manufacturer: | NXP SEMICONDUCTORS |
| Reach Compliance Code: | compliant |
| ECCN Code: | EAR99 |
| HTS Code: | 8541.29.00.40 |
| Manufacturer: | NXP Semiconductors |
| Risk Rank: | 5.2 |
| JESD-609 Code: | e3 |
| Moisture Sensitivity Level: | 3 |
| Peak Reflow Temperature (Cel): | 260 |
| Terminal Finish: | Matte Tin (Sn) |
| [email protected] Reflow Temperature-Max (s): | 40 |
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