| Part number: | PMBFJ620%2C115 |
| Description: | PMBFJ620,115 datasheet pdf and Transistors - JFETs product details from NXP USA Inc. stock available at Utmel |
| Manufacturer | NXP USA Inc. |
| Encapsulation | - |
| Quantity | 5903 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2001 |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOW NOISE |
| HTS Code | 8541.21.00.75 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | MBFJ620 |
| Pin Count | 6 |
| JESD-30 Code | R-PDSO-G6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 190mW |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | AMPLIFIER |
| Input Capacitance (Ciss) (Max) @ Vds | 5pF @ 10V |
| DS Breakdown Voltage-Min | 25V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 0.19W |
| Feedback Cap-Max (Crss) | 2.5 pF |
| Current - Drain (Idss) @ Vds (Vgs=0) | 24mA @ 10V |
| Voltage - Cutoff (VGS off) @ Id | 2V @ 1μA |
| Voltage - Breakdown (V(BR)GSS) | 25V |
| Resistance - RDS(On) | 50Ohm |
| RoHS Status | ROHS3 Compliant |
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