TYPE | DESCRIPTION |
Material | GaN |
ECCN (US) | EAR99 |
HTS | 8541.29.00.75 |
Channel Mode | Depletion |
Number of Elements per Chip | 1 |
Process Technology | HEMT |
Maximum Drain Source Voltage (V) | 150 |
Maximum Gate Source Voltage (V) | 3 |
Maximum Gate Threshold Voltage (V) | 1.3 |
Maximum VSWR | 10 |
Typical Forward Transconductance (S) | 2 |
Output Power (W) | 50(Typ) |
Typical Power Gain (dB) | 11.5 |
Maximum Frequency (MHz) | 3500 |
Minimum Frequency (MHz) | 0 |
Typical Drain Efficiency (%) | 54 |
Minimum Operating Temperature (°C) | -65 |
Maximum Operating Temperature (°C) | 250 |
Automotive | Unknown |
Supplier Package | SOT-467C |
Military | No |
Mounting | Screw |
Package Height | 4.67(Max) |
Package Length | 20.45(Max) |
Package Width | 5.97(Max) |
PCB changed | 3 |
Packaging | Bulk |
Part Status | Active |
Type | JFET |
Pin Count | 3 |
Configuration | Single |
Channel Type | N |
Mode of Operation | 1-Tone CW |
RoHS Status | RoHS Compliant |