| Part number: | PDTD123EK%2C115 |
| Description: | TRANS PREBIAS NPN 250MW SMT3 |
| Manufacturer | NXP |
| Encapsulation | - |
| Quantity | 3216 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| Manufacturer | NXP |
| Category | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single, Pre-Biased |
| Package | TO-236-3, SC-59, SOT-23-3 |
| ECAD | |
| Series | - |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) (Ohms) | 2.2k |
| Resistor - Emitter Base (R2) (Ohms) | 2.2k |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 50mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 250mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SMT3; MPAK |
|
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