| Part number: | PSMN6R0-30YL%2C115 |
| Description: | N沟道 VDS=30V VGS=±20V ID=79A P=55W |
| Manufacturer | NXP恩智浦 |
| Encapsulation | - |
| Quantity | 4 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| 产品分类 | MOSFETs 晶体管 |
| 阈值电压Vgs(th) | 6毫欧@15A，10V |
| 漏极电流Idss | 79A |
| FET类型 | N沟道 |
| 不同 Id，Vgs时的 RdsOn（最大值） | 2.15V@1mA |
| 漏源极电压（Vdss） | 30V |
| 漏源电压(Vdss) | 30V |
| 导通电阻Rds On(Max) | 6mΩ |
| 功率(Max) | 55W |
| 工作温度(Tj) | -55°C~175°C |
| 安装类型 | 表面贴装(SMT) |
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