| Part number: | BSS84%2C215 |
| Description: | P沟道 VDS=50V VGS=±20V ID=0.13A P=250mW |
| Manufacturer | NXP恩智浦 |
| Encapsulation | - |
| Quantity | 1000 |
| RoHS | YES |
| TYPE | DESCRIPTION |
| 产品分类 | MOSFETs 晶体管 |
| 阈值电压Vgs(th) | 2V@1mA |
| 漏极电流Idss | 130mA |
| FET类型 | P沟道 |
| 不同 Id，Vgs时的 RdsOn（最大值） | 10欧姆@130mA，10V |
| 漏源极电压（Vdss） | 50V |
| 是否无铅 | 无铅 / 符合限制有害物质指令(RoHS)规范要求 |
| 零件状态 | 在售 |
| 漏源电压(Vdss) | 50V |
| 连续漏极电流Id@25℃ | 130mA |
| 导通电阻Rds On(Max) | 10Ω |
| 栅极电荷(Qg)(Max) | - |
| 输入电容(Ciss)(Max) | 45.0pF |
| 功率(Max) | 250mW |
| 工作温度(Tj) | -65°C~150°C |
| 安装类型 | 表面贴装(SMT) |
| 封装/外壳 | SOT-23,TO-236AB |
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