Product | Brand | Description | Batch no | For quotation |
---|---|---|---|---|
RD70HVF1-101 | RD70HVF1 is a MOSFET type transistor specifically designed for VHF/UHF High power amplifiers applications.
RD70HVF1-101
|
- |
Consultation | |
A2T18S160W31GSR3 | RF Power Transistor,1805 to 1995 MHz, 129 W, Typ Gain in dB is 19.9 @ 1880 MHz, 28 V, LDMOS, SOT1805
A2T18S160W31GSR3
|
- |
Consultation | |
A2T18S162W31GSR3 | Airfast RF Power LDMOS Transistor 1805-1880 MHz, 32 W Avg., 28 V
A2T18S162W31GSR3
|
- |
Consultation | |
AFT18S260W31GSR3 | Airfast RF Power LDMOS Transistor 1805-1995 MHz, 50 W Avg. 28 V, CFM4, RoHS
AFT18S260W31GSR3
|
- |
Consultation | |
AFT21S220W02GSR3 | RF Power Transistor,2110 to 2170 MHz, 209 W, Typ Gain in dB is 19.1 @ 2140 MHz, 28 V, LDMOS, SOT1802
AFT21S220W02GSR3
|
- |
Consultation | |
AFV09P350-04GNR3 | RF Power Transistor,720 to 960 MHz, 200 W, Typ Gain in dB is 19.5 @ 920 MHz, 48 V, LDMOS, SOT1825
AFV09P350-04GNR3
|
- |
Consultation | |
A2G22S160-01SR3 | RF Power Transistor,1800 to 2200 MHz, 125 W, Typ Gain in dB is 19.6 @ 2110 MHz, 48 V, GaN, SOT1828
A2G22S160-01SR3
|
- |
Consultation | |
A2T07H310-24SR6 | RF Power Transistor,716 to 960 MHz, 126 W, Typ Gain in dB is 18.9 @ 865 MHz, 28 V, LDMOS, SOT1800
|
- |
Consultation | |
A2T18H100-25SR3 | Airfast RF Power LDMOS Transistor, 1805-1995 MHz, 15 W Avg., 28 V, CFM8F, RoHS
A2T18H100-25SR3
|
- |
Consultation | |
VP0550N3-G-P013 | RF Bipolar Transistors MOSFET N-CH Enhancmnt Mode MOSFET
VP0550N3-G-P013
|
- |
Consultation | |
VN0550N3-G-P013 | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 500V, 60 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
VN0550N3-G-P013
|
- |
Consultation | |
VN2460N3-G-P014 | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 600V, 20 OHM 3 TO-92 AMMO ROHS COMPLIANT: YES
VN2460N3-G-P014
|
- |
Consultation | |
VN3205N3-G-P002 | Trans MOSFET N-CH 50V 1.2A 3-Pin TO-92 T/R
VN3205N3-G-P002
|
- |
Consultation | |
VN0300L-G-P002 | MOSFET, N-CHANNEL ENHANCEMENT-MODE, 30V, 1.2 OHM 3 TO-92 RVT/R ROHS COMPLIANT: YES
VN0300L-G-P002
|
- |
Consultation | |
VN1206L-G-P002 | Mosfet, N-channel Enhancement-mode, 120V, 6.0 Ohm 3 TO-92 Rvt/r Rohs Compliant: Yes
VN1206L-G-P002
|
- |
Consultation | |
VRF157FLMP | RF MOSFET (VDMOS) 170 V 600 W 30 MHz T2 T2 Box RoHS Compliant: Yes
VRF157FLMP
|
- |
Consultation | |
TN0620N3-G-P014 | Mosfet, N-channel Enhancement-mode, 200V, 6.0 Ohm 3 TO-92 Ammo Rohs Compliant: Yes
TN0620N3-G-P014
|
- |
Consultation | |
TP2435N8-G | MOSFET, P-CHANNEL ENHANCEMENT-MODE, -350V, 15 OHM 3 SOT-89 T/R ROHS COMPLIANT: YES
TP2435N8-G
|
- |
Consultation | |
J174,126 | Trans JFET P-CH 30V 135mA 3-Pin SPT Ammo
J174%2C126
|
- |
Consultation | |
JTDB75 | Trans GP BJT NPN 55V 8A 3-Pin Case 55AW
JTDB75
|
- |
Consultation |